منابع مشابه
Topical Review for Semiconductor Science and Technology Review of Amorphous Silicon Based Particle Detectors: The Quest for Single Particle Detection
Hydrogenated amorphous silicon (a-Si:H) is attractive for radiation detectors because of its radiation resistance and processability over large areas and with mature Si microfabrication techniques. While the use of a-Si:H for medical imaging has been very successful, the development of detectors for particle tracking and minimum-ionizing-particle detection has lagged, with almost no practical i...
متن کاملRadiation hardness of amorphous silicon particle sensors
Radiation tests of 32 lm thick hydrogenated amorphous silicon n–i–p diodes have been performed using a high-energy 24 GeV proton beam up to fluences of 2 · 10 protons/cm. The results are compared to irradiation of similar 1 lm and 32 lm thick n–i–p diodes using a proton beam of 405 keV at a fluence of 3 · 10 protons/cm. All samples exhibited a drop of the photoconductivity and an increase in th...
متن کاملThin-film silicon detectors for particle detection
Integrated particle sensors have been developed using thin-film on ASIC technology. For this purpose, hydrogenated amorphous silicon diodes, in various configurations, have been optimized for particle detection. These devices were first deposited on glass substrates to optimize the material properties and the dark current of very thick diodes (with thickness up to 50 μm). Corresponding diodes w...
متن کاملRunning head: COMPARISON OF AMORPHOUS SELENIUM AND AMORPHOUS 1 Comparison of Amorphous Selenium and Amorphous Silicon Flat-Panel Detectors
Digital radiographic flat-panel detectors may operate with direct or indirect manners of converting x-ray photon energy into spatial energy signals. Advances in both technologies have led to radiographic work areas that are faster and lend toward lower patient radiation doses. Superior image quality with an abundance of post-processing capabilities is a benefit as well. Whether based on amorpho...
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ژورنال
عنوان ژورنال: MRS Proceedings
سال: 2011
ISSN: 0272-9172,1946-4274
DOI: 10.1557/opl.2011.938